The Graphene Field Effect Transistor Modeling Based on an Optimized Ambipolar Virtual Source Model for DNA Detection
نویسندگان
چکیده
The graphene-based Field Effect Transistors (GFETs), due to their multi-parameter characteristics, are growing rapidly as an important detection component for the apt of disease biomarkers, such DNA, in clinical diagnostics and biomedical research laboratories. In this paper, non-equilibrium Green function (NEGF) is used create a compact model GFET ballistic regime building block DNA sensors. proposed method, self-consistent solutions two-dimensional Poisson’s equation NEGF, using nearest neighbor tight-binding approach on honeycomb lattice structure graphene, modeled efficient numerical method. Then, eight parameters phenomenological ambipolar virtual source (AVS) circuit calibrated by least-square curve-fitting routine optimization algorithm with NEGF transfer data. At last, some AVS that affected induced charge potential biomolecules optimized experimental dataset. new response, acceptable computational complexity, shows good agreement data reaction can effectively be plan investigation biosensors.
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ژورنال
عنوان ژورنال: Applied sciences
سال: 2021
ISSN: ['2076-3417']
DOI: https://doi.org/10.3390/app11178114